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KSA3010 PNP Epitaxial Silicon Transistor
January 2007
KSA3010
PNP Epitaxial Silicon Transistor
* * * * * Audio Power Amplifier High Current Capability : IC = - 6A High Power Dissipation Wide S.O.A Complement to KSC4010
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* T =25C unless otherwise noted
a
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Value
-120 -120 -5 -6 -12 60 150 - 50 ~ 150
Units
V V V A A W C C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T =25C unless otherwise noted
a
Symbol
RJC
* Device mounted on the minimum pad size.
Parameter
Thermal Resistance, Junction to Case
Value
2.0
Units
C/W
Electrical Characteristics*
Symbol
BVCEO ICBO IEBO hFE VCE(sat) VBE(on) fT Cob
Ta = 25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance
Test Conditions
IC= -5A, IB= 0 VCB= -120V, IE= 0 VEB= -5V, IC= 0 VCE= -5V, IC= -1A, IC= -5A, IB= -0.5A VCE= -5V, IC= -5A VCE= -5V, IC= -1A VCB=-10V, IE=0, f=1MHz
Min.
-120 55 -
Typ.
30 180
Max.
-10 -10 160 -2.5 -1.5 -
Units
V A A
V V MHz pF
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
hFE Classification
Classification hFE R 55 ~ 110 O 80 ~ 160
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSA3010 Rev. C
KSA3010 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Item (note)
KSA3010RTU KSA3010OTU
Device Marking
A3010R A3010O
Package
TO-3P TO-3P
Packing Method
TUBE TUBE
Qty(pcs)
450 450
Note : The Suffix "-TU" means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging
2 KSA3010 Rev. C
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KSA3010 PNP Epitaxial Silicon Transistor
Typical Characteristics
10 9
A 00m IB=-2 80mA IB=-1 -160mA IB= mA IB=-140 IB=-120mA
10
3
VCE=5V
IC(A), COLLECTOR CRRENT
8 7 6
IB=-100mA
hFE, DC CURRENT GAIN
IB=-80mA IB=-60mA 5 IB=-40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IB=-20mA
TC=100
10
2
TC=25
10
1
0.1
1
10
VCE(V), COLLECTOR EMITTER VOLTAGE
IC(A), COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC=10IB
VCE(sat), SATURATION VOLTAGE
9
IC(A), COLLECTOR CURRENT
VCE=-5V 8 7 6 5 TC=100 4 3 2 1 TC=25
1
0.1 TC=100 TC=25
0.01 0.01
0.1
1
10
0 0.2
0.4
0.6
0.8
1.0
1.2
1.4
IC(A), COLLECTOR CURRENT
VBE(V), BASE EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-100
100 90
IC[A], COLLECTOR CURRENT
PC(W), POWER DISSIPATION
IC MAX. (Pulse)
-10
10 0m s
80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
IC MAX. (DC)
-1
DC
ms 10
-0.1
*SINGLE NONREPETITIVE PULSE TC=25[ C]
-0.01 0.1 1 10 100
o
VCEO MAX
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC(), CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
3 KSA3010 Rev. C
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KSA3010 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
4 KSA3010 Rev. C
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KSA3010 PNP Epitaxial Silicon Transistor KSA3010 PNP Epitaxial Silicon Transistor
FAIRCHILD SEMICONDUCTOR TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
5 KSA3010 Rev. C
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